Carbon was substitutionally incorporated into silicon using ion implantation
and solid phase epitaxy (SPE) to regenerate a high quality crystalline
substrate. Carbon was implanted into Si (100) substrates using a single
implant of 25 keV ai doses ranging from 1.75 × 1015 to 1.05 ×
1016/cm2. After carbon implantation half of the
substrates were amorphized using a silicon implant. All of the wafers were
subjected to a 700°C anneal in N2 ambient for 30 Minutes to
induce SPE regrowth of the implanted regions. FTIR, SIMS, RBS, and TEM were
used to characterize the samples. Results indicate that carbon was
substitutionally incorporated into the silicon lattice, but that some carbon
did precipitate to form silicon carbide. Post-amorphization improved
regrowth of implanted regions in lower dose implanted wafers. Electrical
Measurements on diode structures indicate that the band gap was reduced for
carbon incorporation at these concentrations.